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| PD - 95243 IRF7530PBF HEXFET(R) Power MOSFET Trench Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) lAvailable in Tape & Reel l Lead-Free l l S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = 20V RDS(on) = 0.030 6 5 Description New trench HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8TM package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Top View Micro8TM Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 5.4 4.3 40 1.3 0.80 10 33 12 -55 to + 150 Units V A W mW/C mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 100 Units C/W www.irf.com 1 5/13/04 IRF7530PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 20 --- --- --- 0.60 13 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.01 --- --- --- --- --- --- --- --- 18 3.4 3.4 8.5 11 36 16 1310 180 150 Max. Units Conditions --- V VGS = 0V, ID = 250uA --- V/C Reference to 25C, ID = 1mA 0.030 VGS = 4.5V, ID = 5.4A 0.045 VGS = 2.5V, ID = 4.6A 1.2 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 5.4A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 70C 100 VGS = 12V nA -100 VGS = -12V 26 ID = 5.4A 5.1 nC VDS = 16V 5.1 VGS = 4.5V --- VDD = 10V --- ID = 1.0A ns --- RG = 6.0 --- RD = 10 --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- 19 13 1.3 A 40 1.2 29 20 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.3A, VGS = 0V TJ = 25C, IF = 1.3A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t<10 sec Starting TJ = 25C, L = 2.6mH RG = 25, IAS = 5.0A. (See Figure 10) Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7530PBF 100 VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP 100 I D , Drain-to-Source Current (A) 2.25V I D , Drain-to-Source Current (A) VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP 2.25V 20s PULSE WIDTH TJ = 150 C 1 10 100 10 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 10 0.1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 5.0A I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C 1.5 1.0 0.5 10 2.0 V DS = 15V 20s PULSE WIDTH 2.5 3.0 3.5 4.0 4.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7530PBF 2000 VGS , Gate-to-Source Voltage (V) 1600 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 5.4A 5.0A VDS = 16V VDS = 10V VDS = 4V 8 C, Capacitance (pF) Ciss 1200 6 800 4 400 2 0 Coss Crss 1 10 100 0 0 5 10 15 20 25 30 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C 10 I D , Drain Current (A) 100 10us 10 100us 1ms 1 10ms TJ = 25 C 1 0.5 V GS = 0 V 1.0 1.5 2.0 0.1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7530PBF 5.0 80 EAS , Single Pulse Avalanche Energy (mJ) TOP 60 4.0 BOTTOM ID 2.2A 4.0A 5.0A ID , Drain Current (A) 3.0 40 2.0 1.0 20 0.0 25 50 TC , Case Temperature ( C) 75 100 125 150 0 25 Starting TJ , Junction Temperature ( C) 50 75 100 125 150 Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7530PBF RDS ( on) , Drain-to-Source On Resistance ( ) 0.04 0.10 RDS(on) , Drain-to -Source Voltage ( ) 0.08 0.03 0.06 Id = 5.0A 0.02 0.04 VGS= 2.5V VGS = 4.5V 0.01 2.0 3.0 4.0 5.0 6.0 7.0 0.02 0 10 20 30 40 VGS, Gate -to -Source Voltage ( V ) ID, Drain Current (A) Fig 13. On-Resistance Vs. Drain Current Fig 12. On-Resistance Vs. Gate Voltage 6 www.irf.com IRF7530PBF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS D -B3 DDDD 8765 H 0.25 (.010) 1234 SSSG e 6X e1 A -CB 8X 0.08 (.003) M A1 C AS BS 0.10 (.004) L 8X C 8X 3.20 ( .126 ) 4.24 5.28 ( .167 ) ( .208 ) RECOMMENDED FOOTPRINT 1.04 ( .041 ) 8X 0.38 8X ( .015 ) S1 G1 S2 G2 M A M SINGLE 1234 D1 D1 D2 D2 8765 DUAL 1234 DIM INCHES MIN MAX MILLIMETERS MIN MAX A A1 B C D e e1 E H L .036 .004 .010 .005 .116 .044 .008 .014 .007 .120 0.91 0.10 0.25 0.13 2.95 1.11 0.20 0.36 0.18 3.05 3 8765 E -A- .0256 BASIC .0128 BASIC .116 .188 .016 0 .120 .198 .026 6 0.65 BASIC 0.33 BASIC 2.95 4.78 0.41 0 3.05 5.03 0.66 6 NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. 0.65 6X ( .0256 ) Micro8 Part Marking Information EXAMPLE: THIS IS AN IRF7501 LOT CODE (XX) DATE CODE (YW) - See table below Y = YEAR W = WEEK P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) PART NUMBER WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D WW = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 24 25 26 X Y Z 50 51 52 X Y Z www.irf.com 7 IRF7530PBF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/04 8 www.irf.com |
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